Produkt:20 Watt broad area semiconductor laser diode @ 808nm

Artikelnummer: EYP-BAL-0808-00020-1540-SOT23-0016

Hersteller: eagleyard Photonics

Herstellernummer: keine Angabe

EAN-Code: keine Angabe

eagleyard’s new 808 nm broad area semiconductor laser diode delivers 20 Watt peak power under pulsed operation from a single emitter.

Its high pulse energy and fast rise time makes this laser diode ideally suited for high resolution sensing applications in extreme harsh environments.

• 10 µs pulse width @ 25 kHz repetition rate
• Topt -40°C to +80°C
• available in a hermetically sealed 9 mm TO-housing
• upon request also available with fast axis collimation (FAC)

Multimode laser diodes operate spatially and longitudinally multimode. In this product family we offer wavelengths between 650 and 1120 nm. The output power range is between 1 and 18 Watt in cw mode - in pulse mode it is up to 100 Watt. Stripe widths from 60 µm to 400 µm are available to optimize beam structure and power for various applications.

These laser diodes are used for sensing in space and defense applications, material processing, medical applications, LIDAR or solid-state laser pumping.

Referring Datasheet at our website:
EYP-BAL-0808-00020-1540-SOT23-0016.pdf